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4V Drive Nch+Nch MOSFET
SH8K32
? Structure
Silicon N-channel MOSFET
? Dimensions (Unit : mm)
SOP8
? Features
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
? Application
Switching
Each lead has same dimensions
? Packaging specifications
? Inner circuit
Package
Taping
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Type
SH8K32
Code
Basic ordering unit (pieces)
TB
2500
? 2
? 1
? 2
? 1
(1) (2) (3) (4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(1)
(2)
(3)
(4)
(5) Tr2 Drain
(6) Tr2 Drain
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(7) Tr1 Drain
(8) Tr1 Drain
? A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
? Absolute maximum ratings (Ta=25 ? C)
<It is the same ratings for the Tr1 and Tr2.>
circuit when the fixed voltages are exceeded.
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
60
± 20
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
P D
? 1
? 1
? 2
± 4.5
± 18
1.0
18
2.0
A
A
A
A
W/TOTAL
Channel temperature
Range of storage temperature
Tch
Tstg
150
? 55 to + 150
° C
° C
? 1 Pw 10 μ s, Duty cycle 1%
? 2 Mounted on a ceramic board.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A
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